PART |
Description |
Maker |
2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
OP793 OP798 |
NPN Pho to tran sis tor with Base- Emitter Resistor
|
OPTEK Technologies
|
NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
NESG2031M05-T1 NESG2031M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范 From old datasheet system
|
NEC, Corp. NEC Corp. NEC[NEC]
|
QIS0660001 |
Single IGBT H-Series Hermetic Module (600 Amperes/600 Volts)
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|
CS220-35N CS220-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 600 THRU 800 VOLTS 35 A, 600 V, SCR, TO-220AB
|
Central Semiconductor Corp. Central Semiconductor, Corp.
|
QID0660023 |
Dual IGBT Module 600 Amperes/600 Volts
|
Powerex Power Semicondu...
|
J60030-2P J60030-3S J60030-1PR J60030-2PR J60030-2 |
Class J Fuseblocks 600 Volt, ú 600 Amps Class J Fuseblocks 600 Volt, ú-600 Amps Fuse 0.5 TO 30A 600V CLASS J
|
Cooper Bussmann, Inc.
|
MAC97A6 MAC97A4 MAC97A8 MAC97-6 MAC97-8 |
CONVERTER DC-DC 20W 24V/5V DUAL TRIACs 0.8 AMPERE RMS 200 - 600 VOLTS 600 V, 0.6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
|
MOTOROLA INC Motorola Mobility Holdings, Inc. Motorola, Inc.
|
BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92 Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
SDR656CTMZ SDR656CTM SDR656CTZ |
40 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA 40AMPS 600 VOLTS 30 nsec HYPER FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC SSDI[Solid States Devices, Inc]
|